Gallium Nitride captures meaningful market share of RF High-Power Semiconductors for wireless infrastructures
Jul 19, 2016
Scottsdale, Arizona - 19 Jul 2016
Spending on RF high-power semiconductors for the wireless infrastructure markets flattened out this year, despite the fact that the overall market hit well over $1.5 billion in 2015. While certain market and sub-market segments are showing moderate growth, it is Gallium Nitride (GaN) that is capturing meaningful market share of RF high-power semiconductors, especially in wireless infrastructure.
“GaN is increasing its market share in 2016, and we believe it will be a significant force by 2021,” says Lance Wilson, Research Director at ABI Research. “This now mainstream technology bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide and power handling capabilities of Silicon LDMOS.”
Outside of wireless infrastructures in the RF high-power semiconductor business, defense-oriented market segments show the strongest performance. Despite the poor press for defense-oriented electronic hardware, the actual performance in 2015 was better than originally thought for some sub-segments. In total, Wilson believes these defense-oriented segments will be a significant market and one to keep an eye on moving forward.
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